| PART |
Description |
Maker |
| SST25WF512 SST25WF010 SST25WF020 |
512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash
|
SST[Silicon Storage Technology, Inc]
|
| SST25WF040-40-5I-QAE SST25WF040-40-5I-QAF SST25WF0 |
128K X 8 FLASH 1.8V PROM, PDSO8
512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc
Microchip Technology Inc.
|
| M48Z512A-7-PM1 M48Z512A-7-PM6 M48Z512AV M48Z512AV- |
4 MBIT (512 KBIT X 8) ZEROPOWER SRAM
|
http://
STMICROELECTRONICS[STMicroelectronics]
|
| HMNR5128D HMNR5128D-70 HMNR5128D-70I HMNR5128D-85 |
5.0 or 3.3V, 4 Mbit (512 Kbit x 8) TIMEKEEPER NVSRAM
|
Hanbit Electronics Co.,Ltd
|
| M58BW016DT7T3FF M58BW016DT7T3FT M58BW016FT7T3FF M5 |
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
|
Numonyx B.V
|
| SST39SF512-90-4C-PH SST39SF512-70-4C-WH SST39SF512 |
512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technol...
Microchip Technology Inc.
http://
Silicon Storage Technology, Inc
|
| M24512 M24512BN 6757 MM24512-MJ5T MM24512-MJ6T MM2 |
From old datasheet system
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I2C Bus EEPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
| M48Z512AV-85PM1 M48Z512AV-85PM6 M48Z512AY-7-PM1 M4 |
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM
2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
|
意法半导
|
| PSD834F2V-15M PSD834F2V-20JI PSD834F2V-20MI PSD834 |
FLASH PSD, 3.3V SUPPLY, FOR 8-BIT MCUS 2 MBIT 256 KBIT DUAL FLASH MEMORIES AND 64 KBIT SRAM
|
ST Microelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
